Reference number
ISO/TR 16268:2009
Technical Report
ISO/TR 16268:2009
Surface chemical analysis — Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation
Edition 1
2009-10
Technical Report
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ISO/TR 16268:2009
41628
Published (Edition 1, 2009)

ISO/TR 16268:2009

ISO/TR 16268:2009
41628
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Format
CHF 129
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Abstract

ISO/TR 16268:2009 specifies a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use. The WoRM is in the form of a polished (or similarly smooth-faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion-implanted with nominally one isotope of a chemical element (also referred to as the analyte), not already present in the host, to a nominal areic dose normally within the range 1016 atoms/cm2 to 1013 atoms/cm2 (i.e. the range of primary interest in semiconductor technology). The areic dose of the ion-implanted analyte retained in the WoRM wafer is certified against the areic dose of the same analyte retained in an ion-implanted silicon wafer having the status of a (preferably certified) secondary reference material (SeRM).

Information is provided on the concept and the procedure for certification of the WoRM. There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification. Supporting information on ion implantation, ion-implantation dosimetry, wavelength-dispersive X‑ray fluorescence spectroscopy and non-certified substitutes for unobtainable SeRMs is provided in four annexes. Sources and magnitudes of uncertainties arising in the certification process are detailed in a fifth annex.

General information

  •  : Published
     : 2009-10
    : International Standard published [60.60]
  •  : 1
     : 19
  • ISO/TC 201/SC 2
  • RSS updates

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